Title:
CRUSHING METHOD OF POLYCRYSTALLINE SILICON
Document Type and Number:
Japanese Patent JP2007296471
Kind Code:
A
Abstract:
To provide a crushing method simply crushing a large amount of polycrystalline silicon cast chips consisting of columnar structure cast by one-way solidification into desired particle sizes with a preferable yield, causing little contamination in crushing, and easy to remove contamination in crushing.
In this crushing method of polycrystalline silicon, at least one face among six surfaces 6 of rectangular parallelepiped polycrystalline silicon cast chips by one-way solidification is crushed after cutting in one or more slits in the direction not crossing the growing direction of the columnar structure formed by one-way solidification.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
HIYOSHI MASATAKA
DONOMAE HITOSHI
DONOMAE HITOSHI
Application Number:
JP2006126489A
Publication Date:
November 15, 2007
Filing Date:
April 28, 2006
Export Citation:
Assignee:
NIPPON STEEL MATERIALS CO LTD
International Classes:
B02C1/00; C01B33/02; H01L31/04
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