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Title:
CRYSTAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JP2020040846
Kind Code:
A
Abstract:
To provide a crystal growth apparatus capable of improving heating efficiency and achieving both the uniformity of a crucible temperature and the accurate measurement of the crucible temperature to obtain a high quality crystal.SOLUTION: A crystal growth apparatus 1 comprises: a heat source 11; a crucible 14 constituted of a vessel body 12 capable of receiving a raw material A1 and a lid part 13 capable of attaching a seed crystal B1; a first heat insulation part 16 sheathing the crucible 14 and having a first through hole 15 provided to penetrate in the thickness direction; a second heat insulation part 18 sheathing the first heat insulation part 16 and having a second through hole 17 provided to penetrate in the thickness direction; a moving mechanism 19 for relatively moving the first heat insulation part 16 and the second heat insulation part 18; and a radiation type temperature measurement part 20 for measuring the temperature of the crucible 14 through the first through hole 15 and the second through hole 17.SELECTED DRAWING: Figure 1

Inventors:
NOGUCHI SHUNSUKE
Application Number:
JP2018167067A
Publication Date:
March 19, 2020
Filing Date:
September 06, 2018
Export Citation:
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Assignee:
SHOWA DENKO KK
International Classes:
C30B23/06; C30B19/00; C30B25/02; C30B29/06; C30B29/36; C30B29/38; C30B29/42; F27B14/20; F27D21/00
Domestic Patent References:
JP2011219287A2011-11-04
JP2012131679A2012-07-12
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata



 
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