PURPOSE: To obtain a high-carrier-concentration N-doped II-VI compound semiconductor without a need for a high-cost apparatus by a method wherein, in a crystal growth method which growns the compound semiconductor, hydrazine is used as the doping raw material of nitrogen.

CONSTITUTION: While AsH3 is being supplied to a reaction tube 11, the temperature of a substrate 12 is raised up to 580°C and the surface of the substrate is cleaned for ten minutes. Dimethylzinc(DMZn) which is housed in a bubbler 1a is bubbled by H2; in the same manner, dimetylselenium(DMSe) which is housed in a bubbler 1b and hydrazine (N2H4) which is housed in a bubbler 1c are bubbled respectively by H2. After the supply of the AsH3 has been stopped, the respective organic raw materials and the hydrazine are supplies to the reaction tube 11. The supply amount of the hydrazine is changed in a range of 0.1 to 50% with reference to the amount of the DMZn, and a ZnSe growth film is obtained. Thereby, a high-carrier-concentration p-type compound semiconductor can be grown at low costs.