結晶積層体、半導体デバイスおよび半導体デバイスの製造方法

Japanese Patent JP7084573

B2

Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InxAlyGa1-x-yN (where 0≤x≤1, 0≤y≤1, 0≤x+y≤1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cm−1 or more and 4.6 cm−1 or less under a temperature condition of normal temperature.

Horikiri Bunsho
Yoshihiro Takehiro
Miyoshi Tomoyoshi

JP2017105756A

June 15, 2022

May 29, 2017

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Sumitomo Chemical Co., Ltd.
SIOX Co., Ltd.
Hosei University

H01L21/265; C23C16/34; C30B29/38; C30B31/22; H01L21/20

JP2006100801A
JP2010111576A
JP2011230955A
JP2009246033A
JP2014527709A

〇林 賢太郎,柘植 博史,太田 博,堀切 文正,成田 好伸,吉田 丈洋,中村 徹,三島 友義,p+薄層を用いた自立GaN基板上JBSダイオード,2017年<第64回>応用物理学会春季学術講演会[講演予稿集] The 64th JSAP Spring Meeting, 2017 [Extended Abstracts],公益社団法人応用物理学会
A. S. Barker,Infrared Lattice Vibrations and Free-ElectronDispersion in GaN,PHYSICAL REVIEW B,1973年01月15日,Volume 7 ,Number 2,p.743-750

Masahiro Fukuoka
Hideo Tachibana

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