Title:
結晶性酸化物薄膜
Document Type and Number:
Japanese Patent JP7413495
Kind Code:
B2
Abstract:
To provide a film deposition method, capable of depositing a film having less impurities in the film and excellent in crystallinity and surface flatness.SOLUTION: A film deposition method comprises: a step of preparing a raw material solution; a mist generation step of generating mist from the raw material solution; a conveyance step of conveying the mist from a mist formation part to a film deposition chamber; and a film deposition step of heating the conveyed mist to deposit a film on a substrate. The step of preparing the raw material solution includes preparing the raw material solution by mixing metal chloride salt or the solution thereof with peroxide or preparing the raw material solution by dissolving metal in the mixed solution of hydrochloric acid and peroxide.SELECTED DRAWING: Figure 1
Inventors:
Takenori Watanabe
Application Number:
JP2022204760A
Publication Date:
January 15, 2024
Filing Date:
December 21, 2022
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
H01L21/365; C23C16/40; C30B29/16; H01L21/368
Domestic Patent References:
| JP2006160600A | ||||
| JP2013028480A | ||||
| JP2006225738A | ||||
| JP2020098818A |
Foreign References:
| US20120027937 |
Other References:
Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates,Japanese Journal of applied physics,2016年,doi.org/10.7567/JJAP.55.1202BA
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka