Title:
CRYSTALLINE SILICON MANUFACTURING UNIT AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2006335582
Kind Code:
A
Abstract:
To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method.
A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time.
Inventors:
SAITO TADASHI
YAMAGA NORIO
HIRASAWA TERUHIKO
YAMAGA NORIO
HIRASAWA TERUHIKO
Application Number:
JP2005158734A
Publication Date:
December 14, 2006
Filing Date:
May 31, 2005
Export Citation:
Assignee:
DAIICHI KIDEN KK
International Classes:
C01B33/02; B22D23/06; B22D25/04; C30B29/06
Domestic Patent References:
| JPH1121120A | 1999-01-26 | |||
| JPS60103017A | 1985-06-07 | |||
| JP2003137526A | 2003-05-14 | |||
| JP2006272373A | 2006-10-12 | |||
| JPH1121120A | 1999-01-26 | |||
| JPS60103017A | 1985-06-07 | |||
| JP2003137526A | 2003-05-14 | |||
| JP2006272373A | 2006-10-12 |
Foreign References:
| WO2005073129A1 | 2005-08-11 | |||
| WO2005073129A1 | 2005-08-11 |
Attorney, Agent or Firm:
Keiichi Yashima
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