Title:
Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2019112671
Kind Code:
A
Abstract:
To provide a Cu-Ga alloy sputtering target including Na and K, having high density and capable of suppressing the occurrence of abnormal discharge and achieving a long life, and a method for manufacturing the Cu-Ga alloy sputtering target.SOLUTION: The Cu-Ga alloy sputtering target has a composition having Ga of 20 atom% or more and 40 atom% or less as a metal component, K and Na of 0.05 atom% or more and 1.0 atom% or less in total and the remainder consisting of Cu and inevitable impurities. Alkali metal salt particles consisting of sodium salt or potassium salt is dispersed in the parent phase of Cu-Ga alloy; the maximum particle size of the alkali metal salt particles is 30 μm or less; and a relative density is 97% or more.SELECTED DRAWING: None
Inventors:
MORI AKIRA
TAKEDA TAKUMA
TAKEDA TAKUMA
Application Number:
JP2017246340A
Publication Date:
July 11, 2019
Filing Date:
December 22, 2017
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; B22F3/10; C22C1/04; C22C1/05; C22C9/00; H01L31/0749
Domestic Patent References:
| JP2011117077A | 2011-06-16 | |||
| JP2016028173A | 2016-02-25 | |||
| JP2012233230A | 2012-11-29 | |||
| JP2014224308A | 2014-12-04 | |||
| JP2014098206A | 2014-05-29 |
Foreign References:
| WO2011083647A1 | 2011-07-14 |
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami