Title:
Cu ALLOY SPUTTERING TARGET, AND Cu ALLOY FILM
Document Type and Number:
Japanese Patent JP2017088921
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a Cu alloy film excellent in thermal conductivity, surface smoothness and thermal stability, and a Cu sputtering target capable of depositing the Cu alloy film by a sputter method.SOLUTION: A Cu alloy sputtering target has a composition of Cr of 0.05 atom% or more and 0.5 atom% or less, Zr of 0.01 atom% or more and 0.1 atom% or less, Si of 0.01 atom% or more and 0.1 atom% or less, and the balance of Cu and inevitable impurities.SELECTED DRAWING: None
Inventors:
NONAKA SOHEI
MORI AKIRA
KUMAGAI TSUTOMU
MORI AKIRA
KUMAGAI TSUTOMU
Application Number:
JP2015217088A
Publication Date:
May 25, 2017
Filing Date:
November 04, 2015
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; C22C9/00; C22C9/10; C23C14/14; G11B5/73; G11B5/84
Domestic Patent References:
| JP2014053065A | 2014-03-20 | |||
| JP2014118621A | 2014-06-30 | |||
| JPH0379734A | 1991-04-04 | |||
| JP2008506040A | 2008-02-28 | |||
| JP2004193551A | 2004-07-08 | |||
| JP2002294438A | 2002-10-09 |
Attorney, Agent or Firm:
Masatake Shiga
Mitsuo Teramoto
Yasushi Matsunuma
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Yasushi Matsunuma
Fumihiro Hosokawa
Kazunori Onami