Title:
CUBIC CRYSTAL SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING CUBIC CRYSTAL SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2016023117
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a cubic crystal silicon carbide semiconductor substrate capable of obtaining a high-quality epitaxial film having few crystal defects by reducing crystal defects efficiently, and a cubic crystal silicon carbide semiconductor substrate manufacturing method.SOLUTION: A cubic crystal silicon carbide semiconductor substrate comprises: a silicon substrate; a first silicon carbide film formed on the surface of the silicon substrate; a mask material having an opening formed on the surface of the first silicon carbide film; and a second silicon carbide film covering the mask material and the silicon carbide film. The mask material is inclined at a predetermined inclination angle θ with respect to one direction in the plane view of the first silicon carbide film.SELECTED DRAWING: Figure 3
Inventors:
KAWANA NORIYASU
Application Number:
JP2014150148A
Publication Date:
February 08, 2016
Filing Date:
July 23, 2014
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
C30B29/36
Domestic Patent References:
| JP2010521810A | 2010-06-24 | |||
| JP2008546181A | 2008-12-18 | |||
| JP2012031012A | 2012-02-16 |
Attorney, Agent or Firm:
Masatake Shiga
Yoshifumi Saeki
Kazunori Onami
Yoshifumi Saeki
Kazunori Onami