Title:
FORMATION OF REFLECTION PREVENTING FILM
Document Type and Number:
Japanese Patent JP3216402
Kind Code:
B2
Abstract:
PURPOSE: To form a W thin film as a reflection preventing film having low reflectivity by performing SiH4 reduction CVD by supplying a reducing gas composed of SiH4 and tungsten fluoride composed of WF6 to the surface of a substrate having an Al or Al alloy film.
CONSTITUTION: CVD utilizing SiH4 reduction is performed by supplying a reducing gas composed of SiH4 and tungsten fluoride composed of WF6 to the surface of a substrate having a heated Al or Al alloy film 13. As a result of the CVD, very small recessing and projecting sections of about ≤100&angst in size are formed on the surface of a W thin film 14. Therefore, the W thin film 14 formed on the surface of the Al or Al alloy film 13 has low reflectivity, because the surface morphology of the thin film 14 is improved and incident lights is irregularly reflected.
Inventors:
Muneo Harada
Application Number:
JP5562094A
Publication Date:
October 09, 2001
Filing Date:
March 25, 1994
Export Citation:
Assignee:
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
G03F7/11; C23C16/08; H01L21/027; H01L21/28; H01L21/285; (IPC1-7): H01L21/027; C23C16/08; G03F7/11; H01L21/285
Domestic Patent References:
| JP232542A | ||||
| JP4298031A |
Attorney, Agent or Firm:
Ryuji Inouchi
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