PURPOSE: To contrive an increase in the uniformity of the resistance value of a control electrode and to obtain a high-performance and high-reliability current-controlled semiconductor device by a method wherein a metal layer forming the control electrode of the current-controlled semiconductor device is formed into a two-layer structure.

CONSTITUTION: A gate electrode 7, which is a control electrode of a current- controlled semiconductor element, it formed of a first control electrode film 7a and a second control electrode film 7b in such a way that the films 7a and 7b are separated from each other and are provided side by side and with an insulating film 10 provided interposingly between these films 7a and 7b, both end parts of these films 7a and 7b are made to short-circuit.