Title:
CURRENT-SENSING RESISTOR OF INTEGRATED STRUCTURE FOR POWER MOS DEVICE USE
Document Type and Number:
Japanese Patent JP3644697
Kind Code:
B2
Abstract:
PURPOSE: To reduce waste of a region to a minimum by a method, wherein a current sensing resistor of an integrated structure consists of a doped-region, which extends from the deep body region of at least one piece of the cell of first cells to the deep body region of the cell, which corresponds to the above cell, of second cells.
CONSTITUTION: A power MOS device, such as an N-channel MOSFET, is constituted of a plurality of cells 1a, and a plurality of cells 1b and all of these cells are provided with a highly-doped P+ deep body region 2. The P+ deep body region 2 of at least one piece of the cell 1a of the main power MOSFET is extendedly provided for annexing the deep body region 2 of the cell 1a to the P+ deep body region 2 of the cell 1b, which corresponds to the deep body region 2 of the cell 1a, of a sensing MOSFET, extending to deep body regions 20 obtained in such a way as to come into contact with each other on the sides opposite to each other by source electrodes Sa and Sb. Such electrodes Sa and Sb are electrically connected with each other by the extended deep body regions 20, and a sensing resistor R3 is introduced in the series-connection of the source electrodes Sa and Sb to source electrodes Sb of the sensing MOSFET.
Inventors:
Rafael Zambrano
Application Number:
JP9999894A
Publication Date:
May 11, 2005
Filing Date:
May 13, 1994
Export Citation:
Assignee:
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
International Classes:
H01L27/06; H01L27/02; H01L27/04; H01L27/08; H01L29/78; (IPC1-7): H01L29/78; H01L27/06
Domestic Patent References:
| JP53289A | ||||
| JP4335560A |
Attorney, Agent or Firm:
Kosaku Sugimura
Yasunori Sato
Norita Tomita
Umemoto Masao
Takashi Nihei
Yasunori Sato
Norita Tomita
Umemoto Masao
Takashi Nihei