Title:
Current sensing
Document Type and Number:
Japanese Patent JP5946483
Kind Code:
B2
Abstract:
The invention provides a current detection circuit and a semiconductor memory apparatus using the current detection circuit thereof. The current detection circuit is capable of rapidly sensing the current flowing through a tiny bit line structure. A page buffer/sensing circuit of the invention includes: a transistor TP3 pre-charging a node SNS during a pre-charge period and providing a target constant current to the node SNS during a discharge period; a transistor TN3 pre-charging the bit line according to the voltage pre-charged to the node SNS; and a transistor TP2 connected to the node SNS. The transistor TP2 detects whether or not a current larger than the constant current supplied by the transistor TP3 is discharged from the bit line and outputs a detection result to a node SENSE.
Inventors:
Kenichi Arakawa
Application Number:
JP2014024479A
Publication Date:
July 06, 2016
Filing Date:
February 12, 2014
Export Citation:
Assignee:
Winbond Electronics Corporation
International Classes:
G11C16/06; G11C13/00; G11C16/04
Domestic Patent References:
| JP2006500727A | ||||
| JP10228792A | ||||
| JP10031897A | ||||
| JP6176585A |
Attorney, Agent or Firm:
Kyozo Katayose
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