To provide a CVD apparatus that improves the yield of a raw material, and stably forms a superconductive layer film on a surface of a superconductive substrate.
The CVD apparatus includes: a raw material gas jetting part 41 for jetting raw material gas; a susceptor 33 for supporting a tape-shaped base material T, and heating the tape-shaped base material T through heat transfer; and an extension nozzle 43 for guiding the raw material gas jetted from the raw material gas jetting part 41 to a surface of the tape-shaped base material T. The susceptor 33 is provided, at both sides of a support part 33A for supporting the tape-shaped base material T and at a position opposing to a lower end part of 43b1 of a second shielding plate 43b of the extension nozzle 43, with a groove 38 lower in height than the support part 33A.
YAMANO SATOSHI
NAKASAKI RYUSUKE
YASUNAGA SHINYA
SAKURAI NORIYOSHI
RYU TSUYOSHI
| JP2005142529A | 2005-06-02 | |||
| JP2010056565A | 2010-03-11 | |||
| JPH1136076A | 1999-02-09 | |||
| JPH0544043A | 1993-02-23 | |||
| JPH0544042A | 1993-02-23 | |||
| JPH09266240A | 1997-10-07 |