Title:
CVD DEVICE
Document Type and Number:
Japanese Patent JPH04365869
Kind Code:
A
Abstract:
PURPOSE: To obtain a susceptor which is not deteriorated in an oxidizing atmosphere at high temp. as a susceptor for supporting a substrate on which a desired thin film is formed.
CONSTITUTION: A susceptor 3 is made of a silicide such as molybdenum silicide (MoSi2). Since this silicide has excellent oxidation resistance at high temp. and maintains stability even after repeated use in an oxidizing atmosphere at high temp., when a thin film is formed by CVD, it can be formed with excellent reproducibility. The silicide of a high m.p. metal such as Cr, W, V, Nb, Ta, Ti, Zr or Hf produces the same effect as molybdenum silicide.
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Inventors:
KAMATA KIICHIRO
Application Number:
JP16870391A
Publication Date:
December 17, 1992
Filing Date:
June 13, 1991
Export Citation:
Assignee:
TDK CORP
KAMATA KIICHIRO
KAMATA KIICHIRO
International Classes:
C23C16/44; C23C16/458; (IPC1-7): C23C16/44
Attorney, Agent or Firm:
Masayoshi Misawa