PURPOSE: To produce a long-length homogeneous thin film by dividing a reaction chamber into a substrate introducing part, a reaction producing chamber and a substrate introducing-out part and exhausting a gas from both sides of a substrate conveying region.
CONSTITUTION: A reaction chamber 30 is divided by bulkheads 32 and 33 to form a substrate introducing part 34, a reaction producing chamber 35 and a substrate introducing out part 36. A substrate 38 is passed through passing holes 39 provided in the bulkheads 32 and 33. A gaseous starting material is fed from a spectorial gas dispersing part 40 fitted to the reaction producing chamber 35. The gaseous starting material spreads uniformly into the reaction producing chamber 35 to form an oxide superconducting thin film 75 on the substrate 38. Gases are exhausted from gas exhausting holes 31a which are both sides of the substrate introducing part 34 and substrate drawing-out part 36 and provided on the opposite side of the gas dispersing part 40. Since the residual gas after the reaction does not remain around the substrate 38 for a long time, a thin film 75 can be deposited on the substrate 38 only by the pure gaseous starting material.
| JPS5270758 | VAPOR PROCESSOR |
| JPS53128979 | GROWING METHOD FOR SEMICONDUCTOR CRYSTAL |
| JPS59117139 | [Title of the device] Semiconductor manufacturing device |
SADAKATA NOBUYUKI
SAITO TAKASHI
KONO TSUKASA
YAMAGUCHI TAICHI
IIJIMA YASUHIRO
NAGAYA SHIGEO
HIRANO NAOKI
CHUBU ELECTRIC POWER
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