Title:
データ読出方法及び半導体記憶装置
Document Type and Number:
Japanese Patent JP3988696
Kind Code:
B2
Abstract:
In a data reading method, a first reading pulse is applied to a memory cell to generate a first signal corresponding to data stored in the memory cell, reference signal generating data corresponding to a high level side is written to the memory cell, a second reading pulse is applied to the memory cell to generate a second signal corresponding to the reference signal generating data, and a reference signal is generated on the basis of the second signal. Then the first signal and the reference signal are compared with each other to determine the stored data stored in the memory cell. In data writing, high-level data is written to the memory cell without using a bit line.
Inventors:
Toshiyuki Nishihara
Yukichi Tsuneda
Yukichi Tsuneda
Application Number:
JP2003280608A
Publication Date:
October 10, 2007
Filing Date:
July 28, 2003
Export Citation:
Assignee:
ソニー株式会社
International Classes:
G11C11/22; H01L21/8246; H01L27/105
Domestic Patent References:
| JP11191295A | ||||
| JP4283489A |
Attorney, Agent or Firm:
Atsuo Waki
Nobuo Suzuki
Nobuo Suzuki