Title:
DEFECT DETECTING PROCESS OF SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPS59161043
Kind Code:
A
Abstract:
PURPOSE:To detect any defect such as dislocation of InxGa1-xP mixed crystal utilized as semiconductor laser and the like at high precision by a method wherein crystal surface is chemically corroded using specific mixed solution. CONSTITUTION:In order to detect a defect in InxGa1-xP (0
Inventors:
UEDA OSAMU
Application Number:
JP3463483A
Publication Date:
September 11, 1984
Filing Date:
March 04, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/66; H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Aoki Akira