To provide an inorganic alignment layer having excellent light fastness and capable of generating a pretilt angle, to provide a substrate for an electronic device, a liquid crystal panel and the electronic equipment provided with the inorganic alignment layer and to provide a depositing method for the inorganic alignment layer.

In the depositing method for the inorganic alignment layer wherein the inorganic alignment layer is deposited on a base material, a target provided opposite to the base material is irradiated with an ion beam to pull out sputtering particles, the base material is irradiated with the sputtering particles from a direction inclined at a prescribed angle θs to the vertical direction of the surface of the base material on which the inorganic alignment layer is to be deposited and the inorganic alignment layer constituted principally of an inorganic material is deposited on the base material. The prescribed angle θs is ≥40°. The pressure of an atmosphere when the inorganic alignment layer is deposited is ≤10-2 Pa.