Title:
DEPOSITION FILM FORMATION METHOD
Document Type and Number:
Japanese Patent JPH1174220
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To form an improved Al film as a conductor with improved controllability by introducing the gas of dimethylaluminumhydride and hydrogen gas into a space for forming a deposition film, and maintaining a surface temperature within a specific temperature range. SOLUTION: In a gas generation room 6 for generating a feed gas, bubbling is performed with respect to liquid-shaped dimethylaluminumhydride DMAH that is retained at a room temperature by hydrogen gas H2 as a carrier gas, a gas-shaped DMAH is generated, which is carried to a mixer 5. In this manner, the feed gas and the reaction gas are used, and the deposition film of Al is formed at the resolution temperature or higher of the feed gas, including Al as a substrate temperature and at 450 deg.C or less. The resistivity of the deposition film becomes 2.7 to 3.0 μΩ.cm at room temperature for a film thickness of 400 Å, which is nearly equal to that of Al bulk. The deposition film is continuous as well as flat. Also, a sufficiently fine film can be formed even in a thick film. Also, the reflectivity at a visible light wavelength region is nearly 80%, thus a thin film with improved surface flatness can be deposited.
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Inventors:
MIKOSHIBA NOBUO
TSUBOUCHI KAZUO
EKI KAZUYA
TSUBOUCHI KAZUO
EKI KAZUYA
Application Number:
JP18198298A
Publication Date:
March 16, 1999
Filing Date:
June 29, 1998
Export Citation:
Assignee:
CANON KK
International Classes:
C23C16/20; H01L21/28; H01L21/285; (IPC1-7): H01L21/285; C23C16/20; H01L21/285
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)