DEPOSITION OF LOW DIELECTRIC FILM

Title:

DEPOSITION OF LOW DIELECTRIC FILM

Document Type and Number:

Japanese Patent JPH08115976

Kind Code:

A

Abstract:

PURPOSE: To deposit an SiOF film having low permittivity where both the concentration of fluorine and the controllability of coverage are satisfied, while reducing contamination due to particles generated at the time of film deposition, by changing the material gas in chemical vapor phase growth.

CONSTITUTION: In the method for depositing an interlayer insulating film 13 of SiOF on the surface of a substrate 11 by chemical vapor phase growth, the material gas for chemical vapor phase growth comprises a gas (SiHF gas) composed of silicon, hydrogen and fluorine molecules and a gas (oxidizing agent) composed of hydrogen and oxygen molecules, for example. Polysilane gas is employed together with the SiHF gas and oxidizing agent in order to control the content of fluorine. Chemical vapor phase growth is carried out in a chemical vapor phase growth system through thermal decomposition reaction or in a remote plasma CVD system.

Inventors:

HASEGAWA TOSHIAKI

Application Number:

JP24738894A

Publication Date:

May 07, 1996

Filing Date:

October 13, 1994

Export Citation:

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Assignee:

SONY CORP

International Classes:

C23C16/40; C23C16/50; H01L21/31; H01L21/316; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; C23C16/40; C23C16/50; H01L21/31; H01L21/316

Attorney, Agent or Firm:

Kuninori Funabashi

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