Title:
成膜方法
Document Type and Number:
Japanese Patent JP7278146
Kind Code:
B2
Abstract:
A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.
Inventors:
Takashi Chiba
Jun Sato
Jun Sato
Application Number:
JP2019094833A
Publication Date:
May 19, 2023
Filing Date:
May 20, 2019
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/316; C23C16/42; C23C16/455; C23C16/50
Domestic Patent References:
| JP2012209394A | ||||
| JP2017092265A | ||||
| JP2018164001A | ||||
| JP2018186178A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito