Title:
PILE OF OXIDE THIN FILM
Document Type and Number:
Japanese Patent JP2018100446
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for piling up an oxide thin film.SOLUTION: In a method for piling up a thin film on a first surface selectively to a second surface of a substrate, an oxide thin film containing an insulating metal oxide is formed by bringing the substrate into contact with a first vapor-phase precursor containing an organic metal, by exposing the substrate to purge gas or vacuum after bringing the substrate into contact with the first vapor-phase precursor, and by exposing the substrate to a second vapor-phase precursor containing molecular oxygen (O) after exposing the substrate to purge gas or vacuum.SELECTED DRAWING: Figure 1
Inventors:
SUVI P HAUKKA
ELINA FARM
RAIJA H MATERO
EVA E TOIS
SUEMORI HIDEMI
ANTTI JUHANI NISKANEN
JUNG SUNG HOON
PETRI RAISANEN
ELINA FARM
RAIJA H MATERO
EVA E TOIS
SUEMORI HIDEMI
ANTTI JUHANI NISKANEN
JUNG SUNG HOON
PETRI RAISANEN
Application Number:
JP2017222532A
Publication Date:
June 28, 2018
Filing Date:
November 20, 2017
Export Citation:
Assignee:
ASM IP HOLDING BV
International Classes:
C23C16/40; C23C16/455; H01L21/31; H01L21/316
Domestic Patent References:
| JP2010540773A | 2010-12-24 | |||
| JP2004281479A | 2004-10-07 | |||
| JP2010232316A | 2010-10-14 | |||
| JP2009539237A | 2009-11-12 | |||
| JP2010518644A | 2010-05-27 |
Foreign References:
| US20100270626A1 | 2010-10-28 | |||
| US20150217330A1 | 2015-08-06 | |||
| WO2016147941A1 | 2016-09-22 | |||
| US20090081827A1 | 2009-03-26 |
Other References:
K.KUKLI ETAL: "Properties of hafnium oxide films grown by ALD from hafnium tetraiodide and oxgen", J.APPL.PHYSICS, vol. 92, JPN7021003931, 2002, pages 5698, ISSN: 0004600581
Attorney, Agent or Firm:
Takashi Onodera