To facilitate exchange of a deposition substrate through a simple structure in a deposition mechanism.
A device for manufacturing a semiconductor substrate 2 (deposition substrate) by making a molten metal from a melting object in a hermetically sealed processing chamber and by solidifying/growing the melting object on the substrate surface 14a of the deposition substrate 14, is equipped with a crucible furnace (melting furnace) for storing the melting object while heating it to make the molten metal, a deposition mechanism for immersing and lifting the deposition substrate 14 in and out of the melting object, and a carbon substrate clamping device 43 for the deposition substrate 14. The carbon substrate clamping device 43 is provided with a clamping part 14c installed on the anti- deposition surface of the deposition substrate 14 and with a chuck mechanism 44 that is freely opened/closed relative to this clamping part 14c.
TADOKORO MASAHIRO
OKUNO ATSUSHI
NAKAI YASUHIRO
NAKAJIMA YOSHITO
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