Title:
DEPOSITION OF THIN FILM AND PRODUCTION OF THIN FILM MULTILAYER SUBSTRATE
Document Type and Number:
Japanese Patent JP3431247
Kind Code:
B2
Abstract:
PURPOSE: To increase the yield by etching a thin metal film using a resist pattern, subjected to correction of defective part, as a mask to form a thin metal film pattern and then correcting the defective part thereof thereby preventing the accumulation of defects during deposition of thin film.
CONSTITUTION: A metal film (aluminium) 20 is deposited on a multilayer ceramic substrate 10. It is then coated with a resist 30 which is prebaked and patterned by means of exposure and development. The resist pattern is then inspected and only the deficient defect 32 is corrected before post-baking is effected. Subsequently, the metal film 20 is etched and the resist is stripped. The metal pattern is then inspected and the etching residue 21, 22 is removed and corrected thus correcting all defects. The operation is repeated for a plurality of times thus preventing accumulation of defects and increasing the production yield of the substrate 15.
Inventors:
Chie Shishido
Yukio Matsuyama
Hiroya Koshishiba
Haruhisa Sakamoto
Yukio Matsuyama
Hiroya Koshishiba
Haruhisa Sakamoto
Application Number:
JP33429593A
Publication Date:
July 28, 2003
Filing Date:
December 28, 1993
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
C23F1/00; H01L21/027; H01L21/302; H01L21/3065; H01L21/3213; H01L21/66; H05K3/00; H05K3/06; H05K3/46; (IPC1-7): H05K3/46; C23F1/00; H01L21/3065; H01L21/66; H05K3/00; H05K3/06
Domestic Patent References:
| JP2121389A | ||||
| JP4102395A | ||||
| JP294594A |
Attorney, Agent or Firm:
Katsuo Ogawa (2 outside)