Title:
【発明の名称】薄膜材料の堆積及び/又は表面改質用電子ビーム/マイクロ波ガス噴射PECVD方法並びに装置
Document Type and Number:
Japanese Patent JP2003524705
Kind Code:
A
Abstract:
A novel high speed, high quality plasma enhanced surface modification or CVD thin film deposition method and apparatus. The invention employs both microwave (5) and e beam energy (6) for creation of a plasma of excited species which modify the surface of substrates (2) or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reacting species to the plasma. This gas jet system (3) allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.
Inventors:
Doller, Joachim
Jones, Scott
Tere, John
Jones, Scott
Tere, John
Application Number:
JP2001562729A
Publication Date:
August 19, 2003
Filing Date:
February 22, 2000
Export Citation:
Assignee:
Energy Conversion Devices Inc.
International Classes:
C23C16/513; C23C16/24; C23C16/517; C23C16/54; H01J7/24; H01L21/205; (IPC1-7): C23C16/513; H01L21/205
Attorney, Agent or Firm:
Hidekazu Miyoshi (1 outside)