Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3228217
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the generation of voids and short circuiting between wirings.
SOLUTION: This device is provided with a semiconductor substrate 10 provided with an element 11, a first silicon oxide film 12 formed thereon, a silicon nitride film 13 formed thereon, a second silicon oxide film 14 formed thereon, a contact hole 16 formed by dry etching with photoresist for the contact hole as a mask, a wiring groove 18 formed through etching with the photoresist for the wiring groove as the mask and metal wirings 20 and 21 embedded in the contact hole 16 and the wiring groove 18. In this case, by eliminating the edge part of the upper end of the contact hole 16 through etching with the photoresist for the wiring groove as the mask, the generation of voids is prevented and short circuiting between the wirings is prevented.
Inventors:
Akira Matsumoto
Application Number:
JP8145598A
Publication Date:
November 12, 2001
Filing Date:
March 27, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/302; H01L21/3065; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; H01L21/3065
Domestic Patent References:
| JP817918A | ||||
| JP3154331A | ||||
| JP8204014A | ||||
| JP10335456A |
Attorney, Agent or Firm:
Takao Maruyama
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