Title:
DETECTION OF MICROWAVE LEAKAGE FOR MICROWAVE PLASMA DEVICE
Document Type and Number:
Japanese Patent JPS56129322
Kind Code:
A
Abstract:
PURPOSE:To detect the amount of leaked microwave with easiness and good reproducibility as well by arranging a diode around a region generating microwave plasma. CONSTITUTION:A general glass-sealed Si diode 13 is connected to a DC ammeter 15 by a low-resistance cable 14 to compose a detection device. The detection device is arranged by keeping a predetermined distance from a tube 4 at the vicinity of a waveguide 2 locating the gas lead-in tube 4 exposed from the waveguide 2 of a mu- wave plasma etching device. And forward current I excited to the diode 13 by mu wave leaked through a quartz glass forming the tube 4 is measured by the ammeter 15. The amount of leakage is known from a correlation curve diagram on current I and the amount of mu wave P and photoetching is performed by adjusting the condition under safety reference value. In this composition, the amount of leakage will easily and precisely be detected at a very low price and safety will also be improved.
Inventors:
YANO HIROSHI
Application Number:
JP3221080A
Publication Date:
October 09, 1981
Filing Date:
March 14, 1980
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G01R29/08; H01L21/302; (IPC1-7): G01R29/00; H01L21/30
Domestic Patent References:
| JPS4810485B1 | 1973-04-04 |