PURPOSE: To analyze a small-scale circuit constituted by plural elements in a smaller calculating area by realizing a function which cuts off the mutual electrical interference between the elements by a technique for setting Newman type boundary conditions at an arbitrary place in an analyzing area.

CONSTITUTION: Information regarding shapes and materials of insulating films and electrodes both constituting a semiconductor element, voltage applied across electrodes, and ion distribution of impurities inside the semiconductor are read by means of a reading means 11 and stored in a prescribed region 41. Then information regarding production of lattice points for discretization is read by means of another reading means 12. A means 13 for producing lattice points for discretization is caused to produce the lattice points on the basis of at least one of the information stored in a storing region 42 and the information stored in the storing region 41, and information is stored in a storing place 43. Moreover, information regarding impurity is accumulated in a storing region 44 by means of a means 14 for setting impurity ion density. In addition, analysis is performed under a designated applied voltage on the basis of the information stored in the storing region 41 after the information read by a means 17 for reading information related to the region where virtual boundary conditions are to be set is accumulated in a reflection type boundary condition setting means 24.