Title:
DEVICE FOR ELECTROPLATING SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP2935647
Kind Code:
B2
Abstract:
PURPOSE: To form a uniform plating film on the region of a wafer to be plated without causing an edge effect by moving a rod anode in parallel with the face of the wafer in a plating tank and conforming the shape of the anode to the electric field distribution on the region of the wafer to be plated.
CONSTITUTION: A plating tank 1 is formed with an inner tank 1A and an outer tank 1B, and an electrolyte is circulated through the outer tank 1B and inner tank 1A by a pump P through a connecting pipe 9. A semiconductor wafer 3 is hung down into the inner tank 1A by a support 4 and connected to the negative electrode of a rectifier 8, and an anode 5 fixed and supported by a wire 7 is connected to the positive electrode of the rectifier 8. The wire 7 is spread so as to move in parallel with the face of the wafer 3, and a cord 10 connected to the anode 5 is driven by motors 6a and 6b to move the anode 5 in parallel with the wafer 3 face in a direction of the arrow X. Meanwhile, the rod anode 5 has a shape conforming to the electric field distribution on the region of the wafer 3 to be plated. A uniform plating film is formed on the wafer 3 in this way.
Inventors:
INOE HIROAKI
Application Number:
JP11581995A
Publication Date:
August 16, 1999
Filing Date:
May 15, 1995
Export Citation:
Assignee:
EBARA SEISAKUSHO KK
International Classes:
C30B33/00; C25D7/12; C25D17/10; C25D17/12; C25D21/00; C25D21/10; (IPC1-7): C25D17/12; C25D7/12; C25D17/10; C25D21/00; C25D21/10; C30B33/00
Domestic Patent References:
| JP5251606A | ||||
| JP6328900A | ||||
| JP266679A | ||||
| JP665795A | ||||
| JP6499284A |
Attorney, Agent or Firm:
Toshitada Takahashi (1 outside)
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