Title:
デバイス及びその製造方法
Document Type and Number:
Japanese Patent JP6851017
Kind Code:
B2
Abstract:
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
Inventors:
Masaki Fujikin
Application Number:
JP2017045475A
Publication Date:
March 31, 2021
Filing Date:
March 09, 2017
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
B01D5/00; C30B29/38; C30B33/12; E03B3/28; H01L21/3065
Domestic Patent References:
| JP2005014141A | ||||
| JP11185704A | ||||
| JP2007005526A | ||||
| JP2011071180A | ||||
| JP2009173507A | ||||
| JP60058202A |
Foreign References:
| WO2013014713A1 | ||||
| WO2012176369A1 |
Attorney, Agent or Firm:
Hiromori Arai
Eisaku Teratani
Shinichi Michisaka
Eisaku Teratani
Shinichi Michisaka