Title:
DEVICE AND METHOD FOR FORMING METALLIC FILM
Document Type and Number:
Japanese Patent JP3649687
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a high quality Cu thin film 19 at a high film formation rate without exposing a substrate to plasma while remarkably reducing cost.
SOLUTION: An electromagnetic wave is entered from a plasma antenna 11 into an excitation chamber 15, which is separated from a substrate storing chamber 1 to form Cl2 gas plasma 16 and etch a member 8 by excited chlorine, thereby forming a precursor (CuxCly) 18 in the chamber 1. The precursor (CuxCly) 18 is carried to the substrate 3 controlled at a temperature lower than that of the member 8 to be etched, and is turned to Cu ion only through a reducing reaction, then the Cu ion is applied to the substrate 3 to form a Cu thin film 19 on the surface of the substrate 3. Thus, in the state that the substrate is not exposed to plasma, the high quality Cu thin film 19 is formed at a high film formation rate while remarkably reducing cost.
Inventors:
Ryuichi Matsuda
Naoki Yahata
Hitoshi Sakamoto
Naoki Yahata
Hitoshi Sakamoto
Application Number:
JP2001348319A
Publication Date:
May 18, 2005
Filing Date:
November 14, 2001
Export Citation:
Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
International Classes:
C23C16/452; C23C16/448; H01L21/285; (IPC1-7): C23C16/448; H01L21/285
Domestic Patent References:
| JP2001284285A | ||||
| JP2094521A |
Foreign References:
| WO2001073159A1 |
Attorney, Agent or Firm:
Toshiro Mitsuishi
Tadahiro Mitsuishi
Yasuyuki Tanaka
Tadahiro Mitsuishi
Yasuyuki Tanaka
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