Title:
DEVICE AND METHOD FOR GENERATING ION AND DEVICE AND METHOD FOR IMPLANTING ION
Document Type and Number:
Japanese Patent JP3504169
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To generate different kinds of plasma in one process without changing the device structure by flowing the pulse current to a conductive ion source so as to generate the pulse discharge, and securely implanting the ion into a work surface layer.
SOLUTION: A linear or a foil-like ion generating source 5 is fixed between electrodes in a discharge chamber 3 at a low pressure, and when the pulse current is flowed, temperature is raised so as to form a particle cloud with the steam in the periphery of the raw material. Resistance of the raw material is increased by the temperature rise, and the voltage between the electrodes is increased. When the voltage between the electrodes achieves the discharge starting voltage of the medium, discharge is generated in the medium, and shunting discharge for generating the plasma including the raw material ion, namely, the pulse discharge is generated. Pulse ion is evenly implanted from the periphery by applying the pulse high voltage to a work 9 dipped in the plasma. Consequently, ions can be implanted into the complicated shaped material, and plasma can be formed with one power supply. Furthermore, the high dose ion can be implanted in a short time.
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Inventors:
Ken Yukimura
Tadashi Kumakiri
Tadashi Kumakiri
Application Number:
JP35337698A
Publication Date:
March 08, 2004
Filing Date:
December 11, 1998
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO
Ken Yukimura
Ken Yukimura
International Classes:
H01J27/08; C23C14/48; H01J37/08; H01J37/317; (IPC1-7): H01J27/08; C23C14/48; H01J37/08; H01J37/317
Domestic Patent References:
| JP8222177A | ||||
| JP6442574A | ||||
| JP11260276A |
Attorney, Agent or Firm:
Toshio Yasuda