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Title:
DEVICE AND METHOD FOR GRINDING SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP3132468
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor wafer grinding device capable of attaining improvement in remaining film controllability and productivity.
SOLUTION: When the semiconductor wafer absorbed by carriers 3a and 3b is located on a platen 1a by rotating an entire head block 2, this wafer is ground in about 70 to 90% of grinding amount estimated optimum by the platen 1a. The semiconductor wafer is located on a film thickness measuring mechanism 5 by rotating the entire head block 2, and film thickness at the prescribed position of each semiconductor wafer is measured by the film thickness measuring mechanism 5. The semiconductor wafer absorbed by the carriers 3a and 3b is located on a platen 1b by further rotating the entire head block 2, and final grinding processing is performed with determined grinding conditions with the target value of a remaining film on the semiconductor wafer is compared with a measured value by the platen 1b.


Inventors:
Koji Torii
Application Number:
JP13729598A
Publication Date:
February 05, 2001
Filing Date:
May 20, 1998
Export Citation:
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Assignee:
NEC
International Classes:
H01L21/304; B24B1/00; B24B49/02; B24B51/00; H01L21/3105; (IPC1-7): H01L21/304; H01L21/304
Domestic Patent References:
JP9168969A
JP8330259A
JP796456A
JP663862A
JP9174420A
JP9168963A
JP9174394A
JP61219570A
Attorney, Agent or Firm:
▲柳▼川 信