Title:
DEVICE FOR PRODUCING MATERIAL BY VAPOR DEPOSITION, PRODUCTION OF MATERIAL BY VAPOR DEPOSITION AND PRODUCTION OF SILICON CARBIDE STRUCTURAL BODY BY CHEMICAL VAPOR DEPOSITION
Document Type and Number:
Japanese Patent JP2593287
Kind Code:
B2
Abstract:
PURPOSE: To obtain a large surface area for vapor deposition by a small hearth area, to enable the easy and efficient discharge of a chemical vapor depositing material and to obtain the high utilizing efficiency of a reacting agent in a method for producing silicon carbide by chemical vapor deposition and a producing device therefor.
CONSTITUTION: A reaction gas is introduced into a triangular chemical vapor deposition cell 12, where silicon carbide is vapor-deposited by a chemical vapor deposition method. By the triangular cell 12, a large surface area for vapor deposition is provided while occupying a minimum amt. of the foor area of a furnace 22. The triangular cell 12 has the added benefit in that deposited silicon carbide has negligible thickness at the edges 48 thereby permitting easy separation of material with a minimum of post deposition machining.
Inventors:
Gitendra Es. Goela
Lee E. Burns
Alexander Teverofsky
James C. McDonald
Lee E. Burns
Alexander Teverofsky
James C. McDonald
Application Number:
JP12637194A
Publication Date:
March 26, 1997
Filing Date:
June 08, 1994
Export Citation:
Assignee:
Sea Buddy, Incorporated
International Classes:
C23C16/01; C23C16/44; C23C16/455; C30B28/14; C30B29/36; C23C16/32; (IPC1-7): C23C16/44; C23C16/32; C30B28/14; C30B29/36
Domestic Patent References:
| JP6326371A |
Other References:
【文献】欧州特許出願公開411910(EP,A)
Attorney, Agent or Firm:
Takashi Ishida (3 others)