To exactly plot a fine pattern on a substrate while using charged corpuscular beams by more effectively excluding an adverse influence caused by a proximate effect while maintaining the throughput of exposing treatment.

An element exposure region (EF) having a size settled within a range with which an aberration caused by an electronic optical system becomes less than a prescribed quantity is divided into plural partial regions. On the basis of exposure information, in which the irradiation quantity of charged corpuscular beams is set for each of plural partial regions, the pattern is plotted on the substrate by electron beams. In this case, concerning each of partial regions, the entire correspondent region is continuously scanned and exposed with the irradiation quantity contained in the exposure information, and these scanning and exposure for each partial region are successively executed concerning all the partial regions in the relevant element exposure region.