Title:
DEVICE FOR VAPOR PHASE SYNTHESIS OF DIAMOND AND METHOD THEREFOR
Document Type and Number:
Japanese Patent JPH0558782
Kind Code:
A
Abstract:
PURPOSE:To attain high speed synthesis and enlargement of synthetic region by providing a pair of electrodes for generation of arc discharge between a plasma generator and a substrate holder in a device for vapor phase synthesis of diamond. CONSTITUTION:After the substrate 16 is fixed to the back side of the substrate holder 4 and the vacuum chamber 1 is evacuated to about 0.6Pa by the exhauster 9, an electric discharge gas (for example, argon gas) is fed between the anode 10 and cathod 11 of the plasma generator 2 from the gas introducing pipe 12 and arc discharge is generated by the power source 13 for ignition and hydrogen gas is added from the gas introducing pipe 12. Further, about 150A current from the constant current D.C. power source 14 is supplied between the electrodes to bring out the plasma jet 17 and the raw gas of diamond (for example, methane gas) is supplied from the gas introducing pipe 3 (pressure in the chamber is about 8000Pa). Then, when the plasma 17 is passed through between the electrodes 5, arc discharge is generated in an orthogonal direction to the plasma by supplying about 600V from the constant current D.C. power source 15. Next, the substrate 16 is irradiated for 30min until the substrate becomes 900 deg.C while closing to the plasma generator 2.
Inventors:
NOTO NOBUHIRO
Application Number:
JP21515491A
Publication Date:
March 09, 1993
Filing Date:
August 27, 1991
Export Citation:
Assignee:
HITACHI KOKI KK
International Classes:
C30B25/02; C30B28/14; C30B29/04; (IPC1-7): C30B25/02; C30B28/14; C30B29/04
Next Patent: DIAMOND SUBSTRATE AND ITS PRODUCTION