Title:
DEVICE WITH DIFFERENT OPERATING CHARACTERISTICS THAT IS FORMED BY ONCE EPITAXIAL GROWTH PROCESS AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH07142746
Kind Code:
A
Abstract:
PURPOSE: To provide similar devices which are formed through a single epitaxial growing process and have different operating characteristic, and its manufacture. CONSTITUTION: A semiconductor device structure 10 has similar devices which have different operating characteristics. These similar devices are formed on a semiconductor substrate layer 13 through opening parts 16, 18, and 20 in a mask layer 12. These opening parts 16, 18, and 20 have different characteristic sizes and intervals, and there the layer of the similar devices can have various thicknesses by detachment from and attachment to the mask layer 12. Growth speeds in the opening parts 16, 18, and 20 are inversely proportional to the characteristic sizes of the respective opening parts 16, 18, and 20.
Inventors:
EDOWAADO EI BIIMU ZA SAADO
Application Number:
JP10400194A
Publication Date:
June 02, 1995
Filing Date:
May 18, 1994
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L29/88; H01L21/20; H01L21/8222; (IPC1-7): H01L29/88
Attorney, Agent or Firm:
Akira Asamura (3 outside)
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