Title:
ダイヤモンド半導体装置、それを用いたロジック装置、及びダイヤモンド半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6783463
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a diamond semiconductor in which an E-mode MOS and a D-mode MOS coexist and operate.SOLUTION: A first MOS transistor formed with a first gate insulating film layer and a gate metal layer, and a second MOS transistor formed with a second gate insulating film layer and a gate metal layer, are formed on a hydrogen termination diamond semiconductor layer. The first insulating film is a double-layer insulating film whose lower layer is an insulating film formed by an atom layer growth method and whose upper layer is an insulating film formed by a sputtering method or a TiOfilm formed by the atom layer growth method. The second insulating film is a single-layer insulating film formed by the atom layer growth method.SELECTED DRAWING: Figure 6
Inventors:
Liu Jiang Wei
Yasuo Koide
Hirotaka Osato
Liao Mayon
Masataka Imura
Yasuo Koide
Hirotaka Osato
Liao Mayon
Masataka Imura
Application Number:
JP2016220840A
Publication Date:
November 11, 2020
Filing Date:
November 11, 2016
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
H01L21/8236; H01L21/316; H01L21/336; H01L21/8234; H01L27/088; H01L29/78
Domestic Patent References:
| JP10125932A | ||||
| JP2016006861A | ||||
| JP2009158612A | ||||
| JP10028045A | ||||
| JP2008166713A |