To provide a dicing die-bonding film having an excellent peeling property when a semiconductor chip obtained by dicing is peeled with its die-bonding film without deteriorating a holding force while dicing a semiconductor wafer even if the semiconductor wafer is thin.
The dicing die-bonding film includes a dicing film having at least an adhesive layer formed on a supporting base material and a die-bonding film provided on the adhesive layer. The thickness of the adhesive layer is 5 to 80 μm, and when the dicing film is peeled from the die-bonding film after dicing from the die-bonding film side to at least part of the adhesive layer, the maximum value of a peeling force near the cut surface is 0.7 N/10 mm or less under the conditions of a temperature of 23°C, a peeling angle of 180°, and a peeling point moving speed of 10 mm/min.
MATSUMURA TAKESHI
MURATA SHUHEI
JPH0917752A | 1997-01-17 | |||
JP2009120822A | 2009-06-04 |
WO2008032367A1 | 2008-03-20 |