Title:
DICING METHOD OF LITHIUM NIOBATE SINGLE CRYSTAL WAFER
Document Type and Number:
Japanese Patent JPS5860698
Kind Code:
A
Abstract:
PURPOSE:To prevent the occurrence of cracking and chipping in dicing and divide the individual elements, by grooving and working a lithium niobate single crystal in a direction parallel to the direction of cleavage planes of a wafer crossing the surface orientation. CONSTITUTION:A wafer 1 is cut to give the surface orientation (01-1) of the wafer 1 to be diced from a lithium niobate single crystal having (-1012), (01- 12) and (1-102) as cleavage planes. The first dicing lines 2 to be parallel excising lines at a given interval and the second dicing grooves 3 crossing the lines 2 respectively are formed on the wafer 1. In the process, the crossing angle is defined as 73.2 deg. and 106.8 deg. as shown by one element 4 after the division. According to the method, the respective sides (a)-(d) of the element 4 can be in agreement with the direction of the cleavage planes crossing the surface of the wafer 1. Thus, the occurrence of the cracks in the division after the dicing is reduced to improve the yield.
Inventors:
SHIYOUROKU TAKESHI
Application Number:
JP15623581A
Publication Date:
April 11, 1983
Filing Date:
October 02, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
G02B6/13; C30B29/30; C30B33/00; G02F1/11; H01L29/06; (IPC1-7): B28D5/00; C30B29/30; C30B33/00; G02B5/172; G02F1/11
Attorney, Agent or Firm:
Noriyuki Noriyuki