Title:
DIE STRUCTURE OF MICRO-LIGHT-EMITTING DIODE DISPLAY
Document Type and Number:
Japanese Patent JP2022072431
Kind Code:
A
Abstract:
To provide a die structure of a micro-light-emitting diode for high density and high luminance.SOLUTION: At least one light-emitting diode element 60 and at least one metal oxide semiconductor field effect transistor 70 are disposed on a mount board. The at least one metal oxide film semiconductor field effect transistor includes a source connected to input voltage by a common electrode, a gate 72 connected to a main control circuit 30, and a drain 73. One end of the at least one light-emitting diode element is connected to at least one drain by a connection line and the other end of the at least one light-emitting diode element is connected to a source drive circuit 40 independently. In the present invention, the at least one metal oxide film semiconductor field effect transistor is provided on the mount board and incorporated in a die structure, thus excellent heat dispersion effects are obtained and the usage needs for high density and high luminance are satisfied.SELECTED DRAWING: Figure 3
Inventors:
HUANG GUO-XIN
ZHAO YONGXIANG
HUANG WEN-HSING
HUANG CHANG-CHING
LIU TAI-HUI
ZHAO YONGXIANG
HUANG WEN-HSING
HUANG CHANG-CHING
LIU TAI-HUI
Application Number:
JP2020181858A
Publication Date:
May 17, 2022
Filing Date:
October 29, 2020
Export Citation:
Assignee:
EXCELLENCE OPTOELECTRONICS INC
International Classes:
G09F9/30; G09F9/00; G09F9/302; G09F9/33; H01L33/00
Domestic Patent References:
| JPS60198579A | 1985-10-08 | |||
| JP2006330092A | 2006-12-07 | |||
| JP2004247130A | 2004-09-02 | |||
| JP2020114049A | 2020-07-27 |
Attorney, Agent or Firm:
try international patent corporation
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