Title:
DIELECTRIC COMPOSITION, DIELECTRIC FILM AND ELECTRONIC COMPONENT
Document Type and Number:
Japanese Patent JP2015110505
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a dielectric composition that shows excellent temperature characteristics while maintaining a high relative dielectric constant.SOLUTION: A dielectric composition is mainly composed of a crystal phase represented by general formula BiSiOand a crystal phase represented by general formula BiSiO. Preferably, for the content of the dielectric composition, the content of BiSiOcrystal phase is 5 mass%-99 mass%, more preferably 30 mass%-99 mass%.
Inventors:
TAKEDA SAORI
KANEKO TOSHIHIKO
YAMASHITA YUKI
SEZAI YUJI
KANEKO TOSHIHIKO
YAMASHITA YUKI
SEZAI YUJI
Application Number:
JP2014175731A
Publication Date:
June 18, 2015
Filing Date:
August 29, 2014
Export Citation:
Assignee:
TDK CORP
International Classes:
C04B35/16; C23C14/08; H01G4/12; H01G4/33
Domestic Patent References:
| JP2000323591A | 2000-11-24 | |||
| JPH0812494A | 1996-01-16 | |||
| JPH11186523A | 1999-07-09 | |||
| JP2000323591A | 2000-11-24 | |||
| JPH0812494A | 1996-01-16 | |||
| JPH11186523A | 1999-07-09 |
Other References:
VEBER ASJA ら: "Synthesis and microstructural characterization of Bi12SiO20（BSO）thin films produced by the sol-gel", CERAMICS INTERNATIONAL, vol. Vol.36, JPN6018005803, January 2010 (2010-01-01), pages 245 - 250, XP026747627, DOI: doi:10.1016/j.ceramint.2009.07.024
JIN-SEONG KIMら: "synshesis and microwave dielectric properties of Bi4(SiO4)3 ceramics", JOURNALOF THE AMERICAN CERAMIC SOCIETY, vol. 91, no. 10, JPN6018005804, 8 September 2008 (2008-09-08), pages 3461 - 3464
VEBER ASJA ら: "Synthesis and microstructural characterization of Bi12SiO20（BSO）thin films produced by the sol-gel", CERAMICS INTERNATIONAL, vol. Vol.36, JPN6018005803, January 2010 (2010-01-01), pages 245 - 250, XP026747627, DOI: doi:10.1016/j.ceramint.2009.07.024
JIN-SEONG KIMら: "synshesis and microwave dielectric properties of Bi4(SiO4)3 ceramics", JOURNALOF THE AMERICAN CERAMIC SOCIETY, vol. 91, no. 10, JPN6018005804, 8 September 2008 (2008-09-08), pages 3461 - 3464
VALANT MATJAZら: "Processing and Dielectric Properties of Sillenite Compounds Bi12MO20-δ（M=Si,Ge,Ti,Pb,Mn,B1/2P1/2）", JOURNAL OF AMERICAN CERAMIC SOCIETY, vol. 84, no. 12, JPN7018000503, December 2001 (2001-12-01), pages 2900 - 2904, XP055172846, DOI: doi:10.1111/j.1151-2916.2001.tb01112.x
VALANT MATJAZら: "Processing and Dielectric Properties of Sillenite Compounds Bi12MO20-δ（M=Si,Ge,Ti,Pb,Mn,B1/2P1/2）", JOURNAL OF AMERICAN CERAMIC SOCIETY, vol. 84, no. 12, JPN7018000503, December 2001 (2001-12-01), pages 2900 - 2904, XP055172846, DOI: doi:10.1111/j.1151-2916.2001.tb01112.x
JIN-SEONG KIMら: "synshesis and microwave dielectric properties of Bi4(SiO4)3 ceramics", JOURNALOF THE AMERICAN CERAMIC SOCIETY, vol. 91, no. 10, JPN6018005804, 8 September 2008 (2008-09-08), pages 3461 - 3464
VEBER ASJA ら: "Synthesis and microstructural characterization of Bi12SiO20（BSO）thin films produced by the sol-gel", CERAMICS INTERNATIONAL, vol. Vol.36, JPN6018005803, January 2010 (2010-01-01), pages 245 - 250, XP026747627, DOI: doi:10.1016/j.ceramint.2009.07.024
JIN-SEONG KIMら: "synshesis and microwave dielectric properties of Bi4(SiO4)3 ceramics", JOURNALOF THE AMERICAN CERAMIC SOCIETY, vol. 91, no. 10, JPN6018005804, 8 September 2008 (2008-09-08), pages 3461 - 3464
VALANT MATJAZら: "Processing and Dielectric Properties of Sillenite Compounds Bi12MO20-δ（M=Si,Ge,Ti,Pb,Mn,B1/2P1/2）", JOURNAL OF AMERICAN CERAMIC SOCIETY, vol. 84, no. 12, JPN7018000503, December 2001 (2001-12-01), pages 2900 - 2904, XP055172846, DOI: doi:10.1111/j.1151-2916.2001.tb01112.x
VALANT MATJAZら: "Processing and Dielectric Properties of Sillenite Compounds Bi12MO20-δ（M=Si,Ge,Ti,Pb,Mn,B1/2P1/2）", JOURNAL OF AMERICAN CERAMIC SOCIETY, vol. 84, no. 12, JPN7018000503, December 2001 (2001-12-01), pages 2900 - 2904, XP055172846, DOI: doi:10.1111/j.1151-2916.2001.tb01112.x