Title:
DIELECTRIC ISOLATING SUBSTRATE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3157595
Kind Code:
B2
Abstract:
PURPOSE: To enable the wire breaking of wiring and micronization while materializing high breakdown strength.
CONSTITUTION: A groove 10, where the angle θ between the sidewall 19 and the main surface is obtuse (>90°C), is dug in the surface of a substrate where at least a lead wire 18 and an n+-buried layer 15 cross each other, and an oxide film 26 is made in the groove 10 and on the main surface of a single crystal Si island 12 so that the exposed face may be nearly flat. The oxide film 26 is a laminate consisting of the thick oxide film 26a made inside the groove 10 and the thin oxide film 26b made uniformly on the surface of the substrate.
Inventors:
Minehiro Nemoto
Naoki Sakurai
Yoshitaka Sugawara
Mutsuhiro Mori
Naoki Sakurai
Yoshitaka Sugawara
Mutsuhiro Mori
Application Number:
JP9244492A
Publication Date:
April 16, 2001
Filing Date:
March 19, 1992
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L21/762; H01L21/76; (IPC1-7): H01L21/762
Domestic Patent References:
| JP464247A | ||||
| JP61119056A | ||||
| JP61244024A | ||||
| JP3270230A | ||||
| JP59217338A | ||||
| JP1196163A |
Attorney, Agent or Firm:
Michito Hiraki