Title:
DIELECTRIC THIN FILM SYNTHESIZING CVD REACTION OVEN
Document Type and Number:
Japanese Patent JP3130157
Kind Code:
B2
Abstract:
PURPOSE: To synthesize a dielectric thin film excellent in characteristics by a method wherein a pre-reaction section by at least either heating or active oxidizing gas is provided before a primary reaction section.
CONSTITUTION: A pre-reaction section 16 by at least either heating or active oxidizing gas is provided before a primary reaction section. The pre-reaction section is equipped with a heating mechanism to be heated up to an optional temperature by the heater provided to its outside and also equipped with a metal structure which is excellent in thermal conductivity and provided with a large number of holes through which pre-reaction material gas is made to blow off to easily heat material gas. Gas heated in the pre-reaction section 16 provided with a heating mechanism is made to form an intermediate product which is not fully decomposed under a specific condition but fully decomposed and oxidized with ease in a later process, which is conductive to that an excellent thin film is formed on a substrate 13.
Inventors:
Shigeru Matsuno
Shinichi Kinouchi
Hisao Watai
Hideoki Uchikawa
Shinichi Kinouchi
Hisao Watai
Hideoki Uchikawa
Application Number:
JP1042093A
Publication Date:
January 31, 2001
Filing Date:
January 26, 1993
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/31; C23C16/40; C23C16/455; (IPC1-7): H01L21/31; C23C16/40; C23C16/455
Domestic Patent References:
| JP59738A | ||||
| JP6101049A | ||||
| JP521749A | ||||
| JP4311571A | ||||
| JP6145992A |
Attorney, Agent or Firm:
Kaneo Miyata (1 person outside)