Title:
半導体ターゲットの計測のための示差法及び装置
Document Type and Number:
Japanese Patent JP6488301
Kind Code:
B2
Abstract:
Disclosed are apparatus and methods for determining process or structure parameters for semiconductor structures. A plurality of optical signals is acquired from one or more targets located in a plurality of fields on a semiconductor wafer. The fields are associated with different process parameters for fabricating the one or more targets, and the acquired optical signals contain information regarding a parameter of interest (POI) for a top structure and information regarding one or more underlayer parameters for one or more underlayers formed below such top structure. A feature extraction model is generated to extract a plurality of feature signals from such acquired optical signals so that the feature signals contain information for the POI and exclude information for the underlayer parameters. A POI value for each top structure of each field is determined based on the feature signals extracted by the feature extraction model.
Inventors:
Pandev Styrian Ivanov
Shchegrov Andrei Buoy
Shchegrov Andrei Buoy
Application Number:
JP2016534779A
Publication Date:
March 20, 2019
Filing Date:
August 11, 2014
Export Citation:
Assignee:
KLA-Tenker Corporation
International Classes:
G03F7/207; G01B11/02; G01B11/24; H01L21/66
Domestic Patent References:
| JP2007523488A | ||||
| JP2013507604A | ||||
| JP2009124101A | ||||
| JP2007281384A | ||||
| JP2008277754A |
Foreign References:
| WO2010095420A1 | ||||
| US20140316730 | ||||
| US20130182263 |
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office