DIMMING DETECTION MOSFET, AND MANUFACTURING METHOD THEREOF

Title:

DIMMING DETECTION MOSFET, AND MANUFACTURING METHOD THEREOF

Document Type and Number:

Japanese Patent JP2009044127

Kind Code:

A

Abstract:

To form a structure of a component for attaining function of a photo-sensor and a dimmer while saving its space.

A light control detection MOSFET has two source and drain regions separated with a channel 130 extending along a first direction, and a substrate 100 irradiated with light and a gate conductive beam 140 extending along a second direction which is almost perpendicular to the first direction. On at least one supporting region, the beam is fixed at each of two edge portions and located on the channel region 130. The gate beam is almost opaque and flexible so that progressive modulation is applied to light reaching the channel 130 based on a curve which is controlled by a voltage difference between a gate voltage and bulk voltage wherein the voltage difference acts so as to bend the beam to come closer to the channel surface.

Inventors:

ABELE NICOLAS

Application Number:

JP2008120484A

Publication Date:

February 26, 2009

Filing Date:

May 02, 2008

Export Citation:

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Assignee:

ST MICROELECTRONICS SA

International Classes:

H01L31/10; H01L21/28; H01L21/3205; H01L23/52; H01L29/417; H01L29/423; H01L29/49; H01L29/78; H01L29/786

Attorney, Agent or Firm:

Eio Furuya
Tadashi Matsushita
Tsurumoto Yoshifumi

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