Title:
DIODE AND DRIVING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3779401
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve trade off between device characteristics by filling each of a plurality of trenches, made in at least one of two emitter layers to reach a base layer, with a gate electrode through a gate insulator.
SOLUTION: A p-type emitter layer 2 is formed on the surface of a high resistance N- type base layer 1. A plurality of trenches are made in the emitter layer to reach the N- type base layer 1 and filled with a gate electrode 4 through a gate insulator 3. A heavily doped N- type layer 2 is formed on the surface of the N- type base layer 1 on the side opposite to the p-type emitter layer 2 and a cathode electrode 7 is provided thereon. According to the structure, effective implantation efficiency of the p-type emitter layer 2 is increased similarly to that of an N+ type emitter layer 6 in a conducting state and thereby the ON-state resistance can be decreased.
Inventors:
Mitsuhiko Kitagawa
Application Number:
JP31942396A
Publication Date:
May 31, 2006
Filing Date:
November 29, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/68; H01L29/861; (IPC1-7): H01L29/68; H01L29/861
Domestic Patent References:
| JP5041515A | ||||
| JP63174373A | ||||
| JP63155768A | ||||
| JP7135309A | ||||
| JP7050405A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
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