Title:
SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3206520
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which data are stored by controlling the concentration of impurity ions implanted into a semiconductor layer, including fluorine.
SOLUTION: A semiconductor storage device possesses a semiconductor stack structure (1-7) consisting of plural semiconductor layers including a first layer, a source electrode 8b made on the semiconductor stack structure, at least one gate electrode 8a, a drain electrode 8c, and control parts (41-43) for controlling the concentration of ions of impurities within the first layer by applying bias voltage to the gate electrode 8a, according to the stored data. In this case, the drain current flowing between the source electrode 8b and the drain electrode 8c is decided, in accordance with the concentration of impurity ions within the first layer.
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Inventors:
Kazuhiko Onda
Akio Wakeshima
Akio Wakeshima
Application Number:
JP28907797A
Publication Date:
September 10, 2001
Filing Date:
October 06, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/265; H01L21/338; H01L27/10; H01L29/778; H01L29/812; (IPC1-7): H01L27/10; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP5840855A | ||||
| JP8204037A | ||||
| JP883902A |
Other References:
電子情報通信学会技術研究報告，ＣＰＭ９６−７６〜８９，Ｖｏｌ．９６，Ｎｏ．２９３，ｐ．６７−７２
Attorney, Agent or Firm:
Minoru Kudo