PURPOSE: The titled dish, obtained by forming a plane for forming a wafer obliquely to the rotating shaft of a turntable, and capable of producing the wafer having a large surface area without increasing the speed of the turntable.
CONSTITUTION: A silicon base material charged into a crusbile 4 is melted under heating in a melting heat source 5, and the resultant melt 6 is discharged to a funnel 7 by tumbling the crusible 4 and dropped form a discharge outlet 7' to the top of a plane (3a) for forming a wafer. In the process, a turntable 1 is rotated to give an influence of centrifugal force by the rotation and gravity based on the titled plane (3a) for forming the wafer to the melt 6, which is made to flow downward in an extended diameter. A dish 3 for forming the wafer is preferably heated at 400W700°C, and the diameter of the melt 6 is extended to the whole surface of the plane (3a) for forming the wafer to the outer peripheral edge thereof. Thus, a melt thin film (B) is formed to discharge the exceess feed onto the turntable 1. The melt thin film (B) is cooled, solidified, peeled and finished as the aimed product wafer.
YOKOYAMA TAKASHI
HIDE ICHIROU
